Resistive Memory Devices, HEMT Devices, LDMOS Devices. Device Simulation and Modeling, Gas Sensors
Projects
Title
Investigator
Co-investigator
Sponsered Agency
Duration
Status
Dielectric Engineering on GaN for Sustainable Energy Applications"
Rajat Mahapatra
UGC-UKIERI II
2018-2020
Completed
Resistive Random Access Memory using HfO₂ based Hetero-Structures for Flexible Electronics
Rajat Mahapatra
DST-SERB
2017-2021
Completed
Special Manpower Development Programme-Chip to System (SMPD-C2S)
Ashis Kumar Mal
Rajat Mahapatra
MeitY
2015-2021
Ongoing
Teachings
Graduate(PG) Level
VLSI Technology, Semiconductor Device and Modeling
Under-Graduate(UG) Level
Electronic Devices and Circuits, Microfabrication Technology, Basic Electronics
UG / PG Students
Data Not Found!
Doctoral Students
Dr. Jagamohan Sahoo
Ph D awarded, presently Member of Technical Staff DXCorr Hardware Technologies Pvt Ltd., Bangalore
Dummy Gate and Buried Oxide Engineering of Power MOSFETs for sub-200 V Applications
Dummy Gate and Buried Oxide Engineering of Power MOSFETs for sub-200 V Applications
Dr. Jagamohan Sahoo
Ph D awarded, presently Member of Technical Staff DXCorr Hardware Technologies Pvt Ltd., Bangalore
Dummy Gate and Buried Oxide Engineering of Power MOSFETs for sub-200 V Applications
Dummy Gate and Buried Oxide Engineering of Power MOSFETs for sub-200 V Applications
Punam Tiwary
Ph D awarded
Research Area: Graphene Oxide(GO) based Gas Sensor.
Punam Tiwary
Ph D awarded
Research Area: Graphene Oxide(GO) based Gas Sensor.
Argha Deep Paul
Ph D awarded, presently Lecturer, Bankura Govt. Polytechnic
Research Area:Resistive Switching Devices fabrication and modelling for Non-Volatile Memory Applications.
Argha Deep Paul
Ph D awarded, presently Lecturer, Bankura Govt. Polytechnic
Research Area:Resistive Switching Devices fabrication and modelling for Non-Volatile Memory Applications.
Dr. Partha Das
Ph D awarded, presently Assistant professor GHRCEM Pune
Dielectrics for GaN based MOS Devices
GaN based High Electron
Mobility Transistor (HEMT)Fabrication, Characterization, Simulation, and
Modeling
Dr. Partha Das
Ph D awarded, presently Assistant professor GHRCEM Pune
Dielectrics for GaN based MOS Devices
GaN based High Electron
Mobility Transistor (HEMT)Fabrication, Characterization, Simulation, and
Modeling
Dr. Shuvanka Maji
Ph D awarded, presently Assistant Professor Vidya Jyothi Institute of Technology, (affiliated to JNTUH), Aziznagar Hyderabad 500075
Oxide based ReRAM
HfOx Based Resistive Switching Devices for Non-Volatile Memory Applications
Dr. Shuvanka Maji
Ph D awarded, presently Assistant Professor Vidya Jyothi Institute of Technology, (affiliated to JNTUH), Aziznagar Hyderabad 500075
Oxide based ReRAM
HfOx Based Resistive Switching Devices for Non-Volatile Memory Applications
Dr. Madhumita Sinha
PhD. awarded
Gas Sensor
Studies on ZnO nanostructures for gas sensing application
Dr. Madhumita Sinha
PhD. awarded
Gas Sensor
Studies on ZnO nanostructures for gas sensing application
Dr. S. Sarkar
Ph D Awarded, presently Associate Professor, Department of Electronics and Communication Engg., SMIT. Sikkim
Theoretical studies of intra organelle nano poration of osteoblast like cell using electric stimuli for bio-medical application
Dr. S. Sarkar
Ph D Awarded, presently Associate Professor, Department of Electronics and Communication Engg., SMIT. Sikkim
Theoretical studies of intra organelle nano poration of osteoblast like cell using electric stimuli for bio-medical application
Himangshu Pal
Ph D awarded, presently Assistant Professor-I, SMIT, Sikkim
Himangshu Pal
Ph D awarded, presently Assistant Professor-I, SMIT, Sikkim
Sameen Azhar
Ph D (Ongoing)
Flexible Resistve Memory Devices
Sameen Azhar
Ph D (Ongoing)
Flexible Resistve Memory Devices
Saikat Biswas
Ph.D. (Joined 2018) (Ongoing)
Research Area:Resistive Switching Devices fabrication and modelling for Non-Volatile Memory Applications.
Saikat Biswas
Ph.D. (Joined 2018) (Ongoing)
Research Area:Resistive Switching Devices fabrication and modelling for Non-Volatile Memory Applications.
Projects
Sl.No.
Title
Name of the PI
Name of the CoPIs
Funding Agency
Amount (Rs.)
Project Type
Project Status
Date of Initiation
Date of Completion
1
Dielectric Engineering on GaN for Sustainable Energy Applications
Rajat Mahapatra
UGC-UKIERI II
Sponsored
Completed
2018
2020
2
Resistive Random Access Memory using HfO₂ based Hetero-Structures for Flexible Electronics
Rajat Mahapatra
DST-SERB
Sponsored
Completed
2017
2021
3
Special Manpower Development Programme-Chip to System (SMPD-C2S)
Ashis Kumar Mal
Rajat Mahapatra
MeitY
Sponsored
Ongoing
2015
2021
Projects
Sl.No.
Title
Name of the PI
Name of the CoPIs
Funding Agency
Amount (Rs.)
Project Type
Project Status
Date of Initiation
Date of Completion
1
Dielectric Engineering on GaN for Sustainable Energy Applications
Rajat Mahapatra
UGC-UKIERI II
Sponsored
Completed
2018
2020
2
Resistive Random Access Memory using HfO₂ based Hetero-Structures for Flexible Electronics
Rajat Mahapatra
DST-SERB
Sponsored
Completed
2017
2021
3
Special Manpower Development Programme-Chip to System (SMPD-C2S)
1. Cellulosic graphene: growth, characterization, and fabrication toward ambient humidity sensing Pal, H.; Mahapatra, R.; Datta, S.; Chatterjee, S. Materials and Manufacturing Processes
37(16), 1850-1858
SCI/SCOPUS
2022
2022
2. A UWB Dual Band-Notched On-Chip Antenna and Its Equivalent Circuit Model. Mandal, S.; Mandal, S. K; Mal, A. K; Mahapatra, R. Progress In Electromagnetics Research B
97
SCI
2022
2021
3. Stable and reversible phase change performance of TiO2 coated VO2 nano-columns: Experiments and theoretical analysis A Samal, A Kumar, L, Shyam M M Dhar Dwivedi, At Dalal, A Ghosh, A D Paul, R Mahapatra, R K Gupta, M A Hasan, A Dey, A Mondal Ceramic International
7(10), 14741-14749
SCI
2021
2021
4. Room temperature ethanol sensing by chemically reduced graphene oxide film Punam Tiwary, SG Chatterjee, SS Singha, Rajat Mahapatra, Amit K Chakraborty Flatchem
30, 100317
SCI/SCOPUS
2021
2021
5. Hydrothermally grown uniform sized nickel hydroxide/oxyhydroxide hexagonal nanoprisms exhibiting room temperature ethanol sensing properties P. Tiwary, N. Chakrabarty, H. J. Edwards, V R .Dhanak, A. Kar, R. Mahapatra, A. K. Chakraborty Applied Surface Science
570, 151090
SCI
2021
2021
6. Analytical breakdown voltage model for a partial SOI‑LDMOS
transistor with a buried oxide step structure J. Sahoo, R. Mahapatra
Journal of Computational Electronics
20, 1711–1720
ESCI
https://doi.org/10.1007/s10825-021-01756-x
2021
2021
7. Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer S Maji, AD Paul, P Das, S Chatterjee, P Chatterjee, VR Dhanak, AK Chakraborty, R Mahapatra Journal of Materials Science: Materials in Electronics
32, 2936
SCI
2021
2021
8. An electronically programmable Off-State breakdown voltage in LDMOS transistor with dual-dummy-gate for high voltage ESD protection J. Sahoo, R. Mahapatra, A. B. Bhattacharayya Microelectronics Journal
108, 104968
ESCI
2021
2021
9. The Effect of Dual Dummy Gate in the Drift Region on the on-State Performance of SOI-LDMOS Transistor for Power Amplifier Application J. Sahoo, R. Mahapatra Silicon
https://doi.org/10.1007/s12633-021-00994-9
ESCI
https://doi.org/10.1007/s12633-021-00994-9
2021
2021
10. Material dependent and temperature driven adsorption switching (p-to n-type) using CNT/ZnO composite-based chemiresistive methanol gas sensor M. Sinha, S. Neogi, R. Mahapatra, S. Krishnamurthy, R. Ghosh Sensors and Actuators B: Chemical
336, 129729
SCI
2021
2021
11. Improved resistive switching characteristics of Ag/Al: HfO x/ITO/PET ReRAM for flexible electronics application AD Paul, S Biswas, P Das, HJ Edwards, A Dalal, S Maji, VR Dhanak, A Mondal, R Mahapatra Semiconductor Science and Technology
36 (6) 065006
SCI
2021
2021
12. Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs S Biswas, AD Paul, P Das, P Tiwary, HJ Edwards, VR Dhanak, IZ Mitrovic, R Mahapatra IEEE Transactions on Electron Devices
68(8), 3787
SCI
2021
2020
13. CMOS time-mode smart temperature sensor using programmable temperature compensation devices and ΔΣΔΣ time-to-digital converter R Krishna, AK Mal, R Mahapatra Analog Integrated Circuits and Signal Processing
102 (1), 97-109
SCI
2020
2020
14. A miniaturized CPW-fed on-chip UWB monopole antenna with band-notch characteristics S Mandal, A Karmakar, H Singh, SK Mandal, R Mahapatra, AK Mal International Journal of Microwave and Wireless Technologies
12 (1), 95-102
SCI/SCOPUS
2020
2020
15. Time-domain smart temperature sensor using current starved inverters and switched ring oscillator-based time-to-digital converter R Krishna, AK Mal, R Mahapatra Circuits, Systems, and Signal Processing
39 (4), 1751-1769
SCI
2020
2020
16. Fast response and low temperature sensing of acetone and ethanol using Al-doped ZnO microrods M Sinha, R Mahapatra, MK Mondal, S Krishnamurthy, R Ghosh Physica E: Low-dimensional Systems and Nanostructures 118, 113868
118, 113868
SCI
2020
2020
17. Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN Partha Das, Leanne AH Jones, James T Gibbon, Vinod R Dhanak, Teresa Partida-Manzanera, Joseph W Roberts, Richard Potter, Paul R Chalker, Sung-Jin Cho, Iain G Thayne, Rajat Mahapatra, Ivona Z Mitrovic ECS Journal of Solid State Science and Technology
9 (6) 063003
SCOPUS
2020
2020
18. Effect of Aluminum Doping on Performance of HfOₓ-Based Flexible Resistive Memory Devices AD Paul, S Biswas, P Das, HJ Edwards, VR Dhanak, R Mahapatra IEEE Transactions on Electron Devices
67(10), 4222
SCI
2020
2019
19. All MOS noise-shaped time-mode temperature sensor R Krishna, AK Mal, R Mahapatra Integration
65, 74-80
SCI/SCOPUS
2019
2019
20. ZnO nanobristles prepared by one-step thermal decomposition of zinc nitrate as ultra-high response ethanol sensor at room temperature P Tiwary, R Mahapatra, AK Chakraborty Journal of Materials Science: Materials in Electronics
30 (6), 5464-5469
SCI
2019
2019
21. Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices S Maji, S Samanta, P Das, S Maikap, VR Dhanak, IZ Mitrovic, R Mahapatra Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
37 (2), 021204
SCI
2019
2019
22. A cost-effective system for triggering alarm to distracted drivers/nurses D Bej, S Rakshit, AK Mal, R Mahapatra Computers & Electrical Engineering
SCI/SCOPUS
2019
2019
23. Band alignments of sputtered dielectrics on GaN SN Supardan, P Das, JD Major, A Hannah, ZH Zaidi, R Mahapatra, KB Lee, R Valizadeh, PA Houston, S Hall, VR Dhanak,and IZ Mitrovic Journal of Physics D: Applied Physics
53(7), 075303
SCI
2019
2018
24. Synthesis of flexible graphene/polymer composites for supercapacitor applications H Pal, S Bhubna, P Kumar, R Mahapatra, S Chatterjee Journal of Materials Engineering and Performance
27 (6), 2668-2672
SCI/SCOPUS
2018
2018
25. Graphene oxide based free-standing films for humidity and hydrogen peroxide sensing P Ranjan, P Tiwary, AK Chakraborty, R Mahapatra, AD Thakur Journal of Materials Science: Materials in Electronics
29 (18), 15946-15956
SCI
2018
2018
26. Evolution of resistive switching mechanism through H2O2sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure Somsubhra Chakrabarti, Rajeswar Panja, Sourav Roy, Anisha Roy, Subhranu Samanta, Mrinmoy Dutta, Sreekanth Ginnaram, Siddheswar Maikap, Hsin-Ming Cheng, Ling-Na Tsai, Ya-Ling Chang, Rajat Mahapatra, Debanjan Jana, Jian-Tai Qiu, Jer-Ren Yang Applied Surface Science
433, 51-59
SCI
2018
2017
27. A High-Sensitivity Gas Sensor Toward Methanol Using ZnOMicrorods: Effect of Operating Temperature Journal of Electronic Materials
SCI/SCOPUS
2017
2017
28. Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOx Film in IrOx/GdOx/W Structure for Biomedical Applications Journal of The Electrochemical Society
SCI/SCOPUS
2017
2017
29. Experimental band alignment of Ta2O5/GaN for MISHEMT applications Microelectronic Engineering
SCI/SCOPUS
2017
2017
30. Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism Scientific Reports
SCI/SCOPUS
2017
2016
31. Ultrafast and Reversible Gas-Sensing Properties of ZnO Nanowire Arrays Grown by Hydrothermal Technique Journal of Physical Chemistry C
SCI/SCOPUS
2016
2016
32. Highly Reliable Label-Free Detection of Urea/Glucose and Sensing Mechanism Using SiO2 and CdSe-ZnS Nanoparticles in Electrolyte-Insulator-Semiconductor Structure Journal of the Electrochemical Society
SCI/SCOPUS
2016
2015
33. Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOxstack dielectric Microelectronic Engineering
SCI/SCOPUS
2015
2015
34. Conductive-bridging random access memory: challenges and opportunity for 3D architecture Nanoscale Research Letters
SCI/SCOPUS
2015
2012
35. Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices Journal of Electronic Materials
SCI/SCOPUS
2012
2012
36. Identification of slow states at the SiO2/SiC interface through sub-bandgap illumination Materials Science Forum
SCI/SCOPUS
2012
2011
37. Analysis of Current Mirror in 32nm MOSFET and CNTFET Technologies World Academy of Science, Engineering and Technology
SCI/SCOPUS
2011
2011
38. Study of the Interface Properties of Ti02/Si02/SiC by Photocapacitance Materials Science Forum
SCI/SCOPUS
2011
2009
39. Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide Materials Science Forum
SCI/SCOPUS
2009
2009
40. Interface and carrier transport behaviour in Al/HfO2/SiO2/SiC Structure Materials Science Forum
SCI/SCOPUS
2009
2009
41. Radiation induced change in defect density in HfO2-based MIM capacitors IEEE Transactions on Nuclear Science
SCI/SCOPUS
2009
2008
42. Role of oxygen in high temperature hydrogen sulphide detection using MISiC sensors Measurement Science and Technology
SCI/SCOPUS
2008
2008
43. The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors Journal of Applied Physics,
SCI/SCOPUS
2008
2008
44. Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack Applied Physics Letter
SCI/SCOPUS
2008
2007
45. Simulation Study of high-k materials for SiC trench MOSFETs Material Science Forum
SCI/SCOPUS
2007
2007
46. Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks Journal of Applied Physics
SCI/SCOPUS
2007
2007
47. First observation of hydrogen sensing by trap assisted conduction current in Pd/TiO2/SiC capacitors at high temperature IEEE Sensors Journal
SCI/SCOPUS
2007
2007
48. Leakage current and charge trapping behavior in TiO2/SiO2 high-k gate dielectric stack on 4H-SiC substrate Journal of Vacuum Science Technology B.
SCI/SCOPUS
2007
2007
49. Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC Journal of Applied Physics
SCI/SCOPUS
2007
2007
50. Positron spectroscopy of high-k dielectric films on SiC Physica Status Solidi
SCI/SCOPUS
2007
2007
51. Trap assisted conduction in high κ dielectric capacitors on 4H-SiC Material Science Forum
SCI/SCOPUS
2007
2006
52. Characteristics of thermally oxidized-Ti as a high-k gate dielectric on SiC metal-oxide-semiconductor devices Electrochemical Society Transactions
SCI/SCOPUS
2006
2006
53. Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures Journal of Electroceramics
SCI/SCOPUS
2006
2006
54. High temperature characterization of high-κ dielectrics on SiC Material Science in Semiconductor. Processing
SCI/SCOPUS
2006
2006
55. High-k gate oxides for silicon heterostructure MOSFET devices Journal of Material Science: Materials in Electronics
SCI/SCOPUS
2006
2006
56. Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H–SiC substrate Applied Physics Letter
SCI/SCOPUS
2006
2006
57. Characteristics of ZrO2 gate dielectrics on O2- and N2O-plasma treated partially strain-compensated Si0.69Ge0.3C0.01 layers Journal of Applied Physics
SCI/SCOPUS
2006
2005
58. Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates Solid State Electronics
SCI/SCOPUS
2005
2005
59. Characteristics of high-k ZrO2 gate dielectrics on O2/N2O plasma treated Si0.69Ge0.3C0.01 /Si heterolayers Ferroelectrics
SCI/SCOPUS
2005
2005
60. Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation Solid State Electronics
SCI/SCOPUS
2005
2004
61. Charge Storage and Photoluminescence Characteristics of Silicon Oxide Embedded Ge Nanocrystal Trilayer Structures Applied Physics Letter
SCI/SCOPUS
2004
2004
62. Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure Material Science in Semiconductor Processing
SCI/SCOPUS
2004
2004
63. Temperature dependent electrical properties of plasma grown gate oxides on tensile strained Si0.993C0.007 layers Journal of Material Science: Materials in Electronics
SCI/SCOPUS
2004
2004
64. Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers J. Vacuum Science Technology B.
SCI/SCOPUS
2004
2003
65. Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially-strain- compensatedSiGeC/Si heterolayers Applied. Physics Letter
SCI/SCOPUS
2003
2003
66. Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure Applied Physics Letter
SCI/SCOPUS
2003
2003
67. Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers Applied Physics Letter
SCI/SCOPUS
2003
2003
68. Microwave plasma oxidation of gallium nitride Thin Solid Films
SCI/SCOPUS
2003
2003
69. Structural and electrical characteristics of the interfacial layer of ultra-thin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01layers Journal of Vacuum Science Technology
SCI/SCOPUS
2003
2002
70. ZrO2 as a high-k dielectric for strained SiGe MOS devices Bull. Mater. Sci
SCI/SCOPUS
2002
2002
71. Electrical properties of plasma grown gate oxides on tensile strained Si1-yCy alloy Electronics Letter
SCI/SCOPUS
2002
Conferences
ID
Details
Year
2021
1.Multipath Delay Cell-Based Coupled Oscillators for ΣΔ Time-to-Digital Converters
Advances in Communications, Signal Processing, and VLSI: Select Proceedings of IC2SV 2019
2021
2019
2.Ethanol and methanol gas sensing properties of ZnO microrods
Materials Today: Proceedings 11, 708-713
2019
2019
3.Flower-like ZnO nanostructures as gas sensor
Materials Today: Proceedings 11, 875-878
2019
2019
4.Design of a compact monopole on-chip antenna for 24 GHz automotive radar application
2019 International Workshop on Antenna Technology (iWAT), 115-117
2019
2019
5.Analysis of Adiabatic flip-flops for Ultra Low Power Applications
2019 Devices for Integrated Circuit (DevIC), 306-309
2019
2017
6.Studies on on-chip antenna using standard CMOS technology
IEEE Devices for Integrated Circuit (DevIC), India
2017
2016
7.High Sensitivity of Gas Sensing Properties ofZnOMicrorods on FTO substrate
IEEE International Conference on Microelectronics, Computing and Communications, India
2016
2016
8.Center potential based threshold voltage modelling of TM-CGAA MOSFET
IEEE International Conference on Microelectronics, Computing and Communications, India
2016
2016
9.Piezoelectric energy harvesting devices for recharging cell-phone batteries
IEEE International Conference on Microelectronics, Computing and Communications, India
2016
2014
10.High SNM 32nm CNFET based 6T SRAM Cell design considering transistor ratio
IEEE International Conference on Electronics and Communication Systems, India
2014
2014
11.Scaling effect on the switching characteristics of a fixed-fixed beam NEM switch,
IEEE International Conference on Electronics and Communication Systems, India
2014
2014
12.Design of a 32nm independent gate FinFET based SRAM cell with improved noise margin for low power application,
IEEE International Conference on Electronics and Communication Systems, India
2014
2014
13.Highly uniform and robust retention under 30μA current operation by inserting ultrathin Al2O3 layer in TaOx-based RRAM
45th IEEE Semiconductor Interface Specialists Conference, San Diego, CA
2014
2014
14.Effect of variation of design parameters on displacement and driving voltage of comb-drive actuators
IEEE International Conference for Convergence for Technology
2014
2014
15.Study of Microwave Behaviors of Cantilever RF MEMS Switch
IEEE International Conference on Control, Instrumentation, Energy & Communication, Calcutta University, January
2014
2013
16.Study of cantilever MEMS switch using different beam materials
International Conference on Emerging Technology-Micro to Nano (ETMN 2013), BITS- Pilani, Goa Campus, India
2013
2013
17.Impact of design parameters on performance of NEM switch
International Conference on Emerging Technology-Micro to Nano (ETMN 2013), BITS- Pilani, Goa Campus, India
2013
2012
18.Design of square wave generator with CNTFET Opamp
IEEE 4th International Conference on Electronics Computer Technology (ICECT 2012), Kanyakumari, India
2012
2011
19.Investigation of Interface Trap States in Al/HfO2/SiO2/SiC MIS Capacitor by Deep Level Transient Spectroscopy
International Conference on Theoretical and Applied Physics (ICTAP), IIT Kharagpur, India
2011
2011
20.Temperature Dependent Switching Characteristics of HfO2 Resistive Memory with a Thin Ti interlayer
XVI International Workshop on the Physics of Semiconductor Devices (IWPSD), IIT Kanpur, India
2011
2011
21.Sampled Sinusoidal Oscillator Using Switched Current Technique
Proceedings of ICECT
2011
2009
22.Role of oxygen defects in HfO2 dielectrics for deployment in hostile environments
E-MRS 2009 Spring Meeting, France
2009
2008
23.Electrical properties of thermally grown HfO2 and HfO2/TiO2 MIM capacitors fabricated on SiO2/Si substrate and HfO2 MIM capacitors fabricated on sapphire
MRS Spring Meeting, Sanfrancisco, USA
2008
2007
24.Impact of interfacial nitridation of HfO2 high-k gate dielectric dtack on 4H-SiC
MRS Spring Meeting,2007, San Francisco, California.
2007
2006
25.High-k gate dielectrics on SiC for extreme gas sensing
European Material Research Society (E-MRS), Spring Meeting, Nice (France),
2006
2005
26.Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices
Electrochemical Society (ECS)- 208th Meeting - Los Angeles, California
2005
2004
27.Growth of ultrathin oxynitride gate dielectric on Si0.74Ge0.26 using low-energy plasma source nitrogen implantation
IEEE International Conference on Computers and Devices for Communication (CODEC’2004), Calcutta, India
2004
2003
28.Interfacial properties of high-k HfO2 gate dielectrics on strained-Si0.74Ge0.26/Si for heterostructure MOSFET applications
Proceedings of XII-th Int. Workshop on the Physics of Semiconductor Device, IIT, Chennai, India
2003
2001
29.Plasma grown gate oxides on tensile-strained Si1-yCy/Si Heterostructure
Proceedings of XI-th Int. Workshop on the Physics of Semiconductor Device, New Delhi
2001
Books
ID
Title
Sl.No.
Title of the Text/Reference book
Authors
Publishers
Year of publication
1
Book Chapter: HfO2-based high-κ dielectrics for use in MEMS applications
Book:MEMS: Fundamental Technology and Applications, (ISBN: 978-1-4665-1582-6
B. Miao, R. Mahapatra, N. Wright & A. Horsfall
CRC Press, Taylor and Francis Group
2013
2
Book ChapterDilute carbon alloy group-IV semiconductor heterostructures for advanced MOSFET devices.:
Book:Applied Physics in the 21st Century
S. K. Ray, R. Mahapatra, G. S. Kar& S. Maikap
Transworld Research Network, Kerala, Trivandrum-695 023, India, 315-370
2008
1.
Sl.No.
Title of the Text/Reference book
Authors
Publishers
Year of publication
1
Book Chapter: HfO2-based high-κ dielectrics for use in MEMS applications
Book:MEMS: Fundamental Technology and Applications, (ISBN: 978-1-4665-1582-6
B. Miao, R. Mahapatra, N. Wright & A. Horsfall
CRC Press, Taylor and Francis Group
2013
2
Book ChapterDilute carbon alloy group-IV semiconductor heterostructures for advanced MOSFET devices.:
Book:Applied Physics in the 21st Century
S. K. Ray, R. Mahapatra, G. S. Kar& S. Maikap
Transworld Research Network, Kerala, Trivandrum-695 023, India, 315-370
2008
Patents
ID
Details
Patent Filed Year
Administrative Responsibilities
Dean (Student Welfare): 2021-
Chief Warden: 2018-2021
Warden: 2016-2018
Contact
Mobile : +91-9434788126
Email : rajat.mahapatra@ece.nitdgp.ac.in
ERP
